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Cryogenic magnetic field sensor based on the magnetoresistive effect in bulk
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10.1063/1.1766398
/content/aip/journal/apl/84/26/10.1063/1.1766398
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766398
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of resistivity on temperature and applied field, , for MT . Inset: Dependence of resistivity on temperature and applied field, , for MT Bi2212.

Image of FIG. 2.
FIG. 2.

Excess resistivity for MT . Inset: Excess resistivity for MT pure Bi2212.

Image of FIG. 3.
FIG. 3.

The field dependence of the relative variation of resistivity , at , for and pure Bi2212.

Image of FIG. 4.
FIG. 4.

The change of sensor resistivity at , when the applied dc field was cycled between and . The probe current used was .

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/content/aip/journal/apl/84/26/10.1063/1.1766398
2004-06-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cryogenic magnetic field sensor based on the magnetoresistive effect in bulk Bi2212+USr2CaO6
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766398
10.1063/1.1766398
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