(a) Schematic of the device. The entire device is made of a single layer of film with a square lattice of antidots. The middle section between the two voltage leads, the part measured, is -wide and -long. (b) A scanning electron microscopy (SEM) image of the film with a square lattice of antidots. The lattice period is and the diameter of antidots is .
Differential resistance of the film as a function of magnetic field normal to the film at different dc bias currents at a temperature of : (a) ; (b) ; (c) ; (d) ; (e) ; (f) ; (g) .
Differential resistance of the film as a function of dc current at two different magnetic fields of (solid line) and (dashed line), at two different temperatures: (a) and (b) .
Schematics of the potential landscape seen by the vortex lines at different dc bias currents and at two different magnetic fields: (left column panel) and (right column panel). Each flux line is denoted by an arrow. As predicted by theory, an empty antidot shows a deeper potential compared with one filled by a flux line (Ref. 10).
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