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A printable form of silicon for high performance thin film transistors on plastic substrates
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10.1063/1.1767591
/content/aip/journal/apl/84/26/10.1063/1.1767591
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767591
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Schematic illustration of representative processing steps for producing microstructured silicon . Conventional or soft lithographic procedures define patterns of on the top surface of a silicon-on-insulator substrate. Anisotropic wet etching (50:75 at for ) of the exposed regions of the silicon, followed by removal of the underlying (etching with HF) lifts off micro/nanoscale objects of single crystal silicon. These objects, which we refer to collectively as , can be dry transfer printed or solution cast at ambient conditions onto a wide variety of device substrates, including low cost plastic sheets, for building devices such as high performance thin film transistors.

Image of FIG. 2.
FIG. 2.

(Color) Images of micro- and nanoscale elements of single crystal silicon. (a) An optical micrograph of a solution cast tangled mat of silicon rods (widths ; thickness ; lengths ). The inset image shows strips (roughly 10 million of them) dispersed in a solution of ethanol. The low resolution SEM image in (b) illustrates the mechanical flexibility range of some flat microstrips (thickness ; widths ; lengths ) solution casted onto a bare silicon wafer. (c) A high resolution SEM image of one of these objects. Note the extremely smooth sidewalls generated by the anisotropic wet etching procedures.

Image of FIG. 3.
FIG. 3.

(Color) High performance thin film transistor formed with as the semiconductor. (a) A top view micrograph of transferred onto a PDMS coated Kapton sheet ( thick). The top inset pictures illustrate the flexibility of this system. The bottom inset shows a top view micrograph of dense microstrips ( wide; spaced apart) cold welded on a thin coated Mylar sheet. (b) Current–voltage characteristics of a device made with ribbons wide) that remain on the surface of the SOI wafer ( ). The inset shows an optical micrograph; several ribbons operate in parallel in this device. (c) A device made on a Mylar sheet coated with ITO gate and polymer dielectric. The semiconductor uses a wide microstrip of single crystal silicon in a channel whose length is . The in this case was patterned by solution cast. The transfer characteristics were measured at . The slope of this curve defines an effective device mobility (using the physical width of the source and drain electrodes, which is equal to the width of the strip in this case) of . The inset shows an optical micrograph of the device.

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/content/aip/journal/apl/84/26/10.1063/1.1767591
2004-06-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A printable form of silicon for high performance thin film transistors on plastic substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767591
10.1063/1.1767591
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