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In situ ultraviolet treatment in an ambient upon -type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells
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10.1063/1.1767601
/content/aip/journal/apl/84/26/10.1063/1.1767601
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767601
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photo characteristics of solar cells with and without the postdeposition () treatment for the window layer.

Image of FIG. 2.
FIG. 2.

Spectral response of solar cells with and without the postdeposition treatment for the window layer.

Image of FIG. 3.
FIG. 3.

Fitted real-part and imaginary-part of dielectric functions of films with and without treatment. Four fitted parameters (in ), , , and (in ) are included.

Image of FIG. 4.
FIG. 4.

Comparison of spectra between as-grown -thick and the same film after the .

Image of FIG. 5.
FIG. 5.

Band diagram that explains the increase in the built-in potential by the in situ for the window layer in the solar cell. The value denotes a potential difference at the interface originating from the UTA. The value describes the band lift arising from the Fermi level location of the window layer closer to the valence band edge of the absorber. The gray-colored ultrathin contaminant layer acts as a buffer layer reducing the recombination loss at the interface.

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/content/aip/journal/apl/84/26/10.1063/1.1767601
2004-06-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767601
10.1063/1.1767601
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