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Electron field emission from heterostructures by high temperature carbon implantation into silicon
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10.1063/1.1767958
/content/aip/journal/apl/84/26/10.1063/1.1767958
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767958
/content/aip/journal/apl/84/26/10.1063/1.1767958
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/content/aip/journal/apl/84/26/10.1063/1.1767958
2004-06-17
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron field emission from SiC∕Si heterostructures by high temperature carbon implantation into silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1767958
10.1063/1.1767958
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