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Low-current blocking temperature writing of double barrier magnetic random access memory cells
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10.1063/1.1646211
/content/aip/journal/apl/84/6/10.1063/1.1646211
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/6/10.1063/1.1646211
/content/aip/journal/apl/84/6/10.1063/1.1646211
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/content/aip/journal/apl/84/6/10.1063/1.1646211
2004-02-04
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-current blocking temperature writing of double barrier magnetic random access memory cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/6/10.1063/1.1646211
10.1063/1.1646211
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