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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface
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10.1063/1.1651325
/content/aip/journal/apl/84/9/10.1063/1.1651325
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/9/10.1063/1.1651325
/content/aip/journal/apl/84/9/10.1063/1.1651325
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/content/aip/journal/apl/84/9/10.1063/1.1651325
2004-02-25
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/9/10.1063/1.1651325
10.1063/1.1651325
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