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Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors
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10.1063/1.1651649
/content/aip/journal/apl/84/9/10.1063/1.1651649
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/9/10.1063/1.1651649
/content/aip/journal/apl/84/9/10.1063/1.1651649
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/content/aip/journal/apl/84/9/10.1063/1.1651649
2004-02-25
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/9/10.1063/1.1651649
10.1063/1.1651649
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