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Carbon nanotube junction diodes
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10.1063/1.1769595
/content/aip/journal/apl/85/1/10.1063/1.1769595
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/1/10.1063/1.1769595
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) Schematic cross section of SWNT junction diode. The split gates VG1 and 2 are used to electrostatically dope a SWNT. For example, a junction with respect to the contact can be formed by biasing and ; (b) SEM of a SWNT over a split gate.

Image of FIG. 2.
FIG. 2.

Device transfer characteristics with , and .

Image of FIG. 3.
FIG. 3.

(Color) characteristics of a single SWNT when electrostatically doped to form a junction (), junction , or FET .

Image of FIG. 4.
FIG. 4.

(Color) curve plotted in absolute magnitude of the current. The band diagram illustrates the band structures during forward and reverse bias near the vicinity of the junction. The fit is to the diode equation given with an ideality factor of and .

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/content/aip/journal/apl/85/1/10.1063/1.1769595
2004-06-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon nanotube p-n junction diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/1/10.1063/1.1769595
10.1063/1.1769595
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