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Mechanism for protruding silicon oxide formation by the TNL method. (a) Enlarged AFM topography image of a single line. (b) AFM topography image of an area consisting of a series of oxidized protuberances with a pitch of . All the images were recorded at a scan rate of using a conventional cantilever for the measurements.
(a) AFM topography image of nanostructures prepared by the TNL method with a normal force of in aqueous KOH solution (left) or air (right). (b) Cross-sectional topography trace of the line marked in (a).
(a) Change in inclination of the protruding structures generated upon increasing the speed in the direction, , from . (b) AFM topography image of the nanostructure prepared by the TNL method in KOH solution. The speed in the direction was changed from after modifying half the area. (c) Cross-sectional topography trace of the line marked in (b).
Outline if the TNL process in aquecous solution.
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