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Thickness scaling of polycrystalline films downto prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties
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10.1063/1.1781354
/content/aip/journal/apl/85/10/10.1063/1.1781354
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1781354
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD scans and XRD reciprocal space mapping forthick PZT films deposited on (b) and (c) substrates.

Image of FIG. 2.
FIG. 2.

(a) hysteresis loops measured at and (b) saturation properties of and values for the same films as in Fig. 1.

Image of FIG. 3.
FIG. 3.

Leakage current density as function of applied electrical field for same films as in Fig. 2.

Image of FIG. 4.
FIG. 4.

Leakage current density as function of applied electrical field for thick films deposited on substrates prepared by pulsed-MOVD and continuous-MOCVD.

Image of FIG. 5.
FIG. 5.

(a) hysteresis loops measured at and (b) saturation properties of and for films prepared on substrates prepared by pulsed-MOCVD.

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/content/aip/journal/apl/85/10/10.1063/1.1781354
2004-09-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1781354
10.1063/1.1781354
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