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X-ray diffraction patterns collected from (a) undoped GaN and (b) Nd-doped GaN films, both grown on 7059 glass substrates.
NIR EL spectra from Nd-doped GaN EL devices. The spectra were recorded at room temperature at three different ac peak voltages applied to the devices. The inset is an enlargement of the spectral region between 1200 and to show details of the lower intensity NIR emission peaks.
The optical transition level diagram for ion (see Ref. 10). Arrows represent the radiative transitions corresponding to the visible and NIR EL emission peaks observed from Nd-doped GaN EL devices.
Visible EL emission spectrum emitted from Nd-doped GaN EL devices. The spectrum was recorded at room temperature with a resolution of .
EL intensity versus applied ac peak voltage data measured for near-infrared emission peaks at 905, 1082, and . Note that the maximum slopes of all three curves intersect the voltage axis at .
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