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Multiple-bit storage properties of porphyrin monolayers on
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10.1063/1.1782254
/content/aip/journal/apl/85/10/10.1063/1.1782254
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1782254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The structure of dihydroxyphosphorylmethylferrocene (top left). (b) The structure of 5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II) (bottom left). The schematic of the EMOS capacitor with a simplified equivalent circuit (right).

Image of FIG. 2.
FIG. 2.

Current–voltage CyV characteristics of the EMOS capacitor containing with voltage scan rates of 2, 5, 10, and . Cyclic voltammetry of the EOS capacitor at does not show redox peaks. Gate voltage is referenced to the potential applied to the Ag-wire top electrode.

Image of FIG. 3.
FIG. 3.

Background current and peak current vs voltage scanning rates showing the linear dependence. Data were obtained for the EMOS capacitor containing .

Image of FIG. 4.
FIG. 4.

(a) and (b) hysteresis of the EMOS capacitor containing and the EOS capacitor at . Both capacitors show a conductance peak around due to depletion of the silicon substrate. The EMOS capacitor shows two redox peaks and a hysteresis shift of while the EOS capacitor does not show any peak or hysteresis related to redox processes.

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/content/aip/journal/apl/85/10/10.1063/1.1782254
2004-09-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiple-bit storage properties of porphyrin monolayers on SiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1782254
10.1063/1.1782254
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