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(a) The structure of dihydroxyphosphorylmethylferrocene (top left). (b) The structure of 5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II) (bottom left). The schematic of the EMOS capacitor with a simplified equivalent circuit (right).
Current–voltage CyV characteristics of the EMOS capacitor containing with voltage scan rates of 2, 5, 10, and . Cyclic voltammetry of the EOS capacitor at does not show redox peaks. Gate voltage is referenced to the potential applied to the Ag-wire top electrode.
Background current and peak current vs voltage scanning rates showing the linear dependence. Data were obtained for the EMOS capacitor containing .
(a) and (b) hysteresis of the EMOS capacitor containing and the EOS capacitor at . Both capacitors show a conductance peak around due to depletion of the silicon substrate. The EMOS capacitor shows two redox peaks and a hysteresis shift of while the EOS capacitor does not show any peak or hysteresis related to redox processes.
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