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Transport properties of ordered- heterostructures
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10.1063/1.1784876
/content/aip/journal/apl/85/10/10.1063/1.1784876
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1784876
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The excess-carrier decay in a -type structure. Curve A was obtained by TRPL and Curve B by RCPCD.

Image of FIG. 2.
FIG. 2.

The excess carrier decay for a -type as measured by TRPL.

Image of FIG. 3.
FIG. 3.

The excess carrier decay of the double heterostructure of Fig. 2 as measured by RCPCD. The measurements were made at very low injection.

Image of FIG. 4.
FIG. 4.

The excess-carrier decay of the double heterostructure of Fig. 2 as measured by RCPCD. The measurements were made at high injection.

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/content/aip/journal/apl/85/10/10.1063/1.1784876
2004-09-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of ordered-GalnP∕GaAs heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1784876
10.1063/1.1784876
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