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Schematic diagram of the epilayer and the device used in this study. The Hall bar is long by wide. The distance between adjacent voltage probes is . The layer between the epilayer surface and the gate metal is .
(a) Measured 2DEG density at as a function of gate voltage between 1 and . In this regime, vs is linear and well approximated by . (b) 2DEG sheet resistance as a function of electron density at .
(Color) Mobility at solid black curve is the experimentally measured mobility as a function of 2DEG density from to . For comparison, the red line displays the function at low density and the blue line represents in the high-density regime. The open black squares are calculated from .
Longitudinal magnetoresistance, , as a function of magnetic field at three different gate voltages. All data are taken at . The filling factor of several principle integer quantum Hall states is indicated. The two lower density traces are offset from zero for clarity.
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