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Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry
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10.1063/1.1785289
/content/aip/journal/apl/85/10/10.1063/1.1785289
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1785289
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PCR amplitude and phase maps obtained by scanning an area from the front side of a Si wafer with a defect on the back side. (a,b) Amplitude (phase) with dc IR laser off. (c,d) Amplitude (phase) with dc IR laser on. Experimental parameters: , ; spot , . , ; spot size: . Number of data points: 400.

Image of FIG. 2.
FIG. 2.

PCR amplitude and phase maps obtained by scanning an area from the front side of a Si wafer with the defect on the back side. (a,b) Amplitude (phase) with dc IR laser off. (c,d) Amplitude (phase) with dc IR laser on. The experimental parameters were the same as in Fig. 1, but .

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/content/aip/journal/apl/85/10/10.1063/1.1785289
2004-09-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1785289
10.1063/1.1785289
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