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-capping of nanohuts on analyzed by scanning tunneling microscopy and the finite element method
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10.1063/1.1787958
/content/aip/journal/apl/85/10/10.1063/1.1787958
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1787958
/content/aip/journal/apl/85/10/10.1063/1.1787958
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/content/aip/journal/apl/85/10/10.1063/1.1787958
2004-09-13
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1787958
10.1063/1.1787958
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