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-capping of nanohuts on analyzed by scanning tunneling microscopy and the finite element method
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10.1063/1.1787958
/content/aip/journal/apl/85/10/10.1063/1.1787958
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1787958

Figures

Image of FIG. 1.
FIG. 1.

Sequence of STM micrographs taken in real time over the same region of interest, as a function of increasing coverage [(b)–(d)] of the -thick surface [shown in (a)] at . Note the position of the two huts in (a) and (b), and of the two huts in the bottom-left part of (b) and (c). (e) -capped surface at the completion of capping after a short anneal. (f) -capped surface after a prolonged anneal.

Image of FIG. 2.
FIG. 2.

(a) Finite element model of case 5, where the -cap layer grows in a 2D fashion by wetting the wetting layer, embedding the huts in it. (b) Dependence of normalized energy, , on the configuration of the -cap layer. Cases 1 and 2: forms 3D huts of its own. Cases 3 and 4: sticks to the hut facets; Case 5 (reference): wets the layer, embedding the huts in it.

Tables

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Table I.

huts configurational energies, , for 5, 10, and ML’s, as calculated by summing the surface and the FE-calculated elastic, , terms.

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/content/aip/journal/apl/85/10/10.1063/1.1787958
2004-09-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1787958
10.1063/1.1787958
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