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The electron spin resonance lines of three samples for (a) perpendicular magnetic field and for (b) in-plane magnetic field . The inset shows the employed layer structure and its conduction band variation.
(a) g-factor for perpendicular (, circles) and in-plane (, squares) orientation of as a function of concentration in the channel. (b) The Bychkov–Rashba parameter as a function of concentration evaluated from g-factor anisotropy (circles) and from the ESR linewidth (squares). The triangle marks the BR parameter for a pure quantum well (see Ref. 6).
Characteristics of investigated samples: channel concentration , barrier concentration , their difference, electron mobility (at ) and concentration for three MBE grown, modulation doped quantum well samples.
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