1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Anisotropy of g-factor and electron spin resonance linewidth in modulation doped quantum wells
Rent:
Rent this article for
USD
10.1063/1.1788881
/content/aip/journal/apl/85/10/10.1063/1.1788881
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1788881

Figures

Image of FIG. 1.
FIG. 1.

The electron spin resonance lines of three samples for (a) perpendicular magnetic field and for (b) in-plane magnetic field . The inset shows the employed layer structure and its conduction band variation.

Image of FIG. 2.
FIG. 2.

(a) g-factor for perpendicular (, circles) and in-plane (, squares) orientation of as a function of concentration in the channel. (b) The Bychkov–Rashba parameter as a function of concentration evaluated from g-factor anisotropy (circles) and from the ESR linewidth (squares). The triangle marks the BR parameter for a pure quantum well (see Ref. 6).

Tables

Generic image for table
Table I.

Characteristics of investigated samples: channel concentration , barrier concentration , their difference, electron mobility (at ) and concentration for three MBE grown, modulation doped quantum well samples.

Loading

Article metrics loading...

/content/aip/journal/apl/85/10/10.1063/1.1788881
2004-09-13
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1788881
10.1063/1.1788881
SEARCH_EXPAND_ITEM