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Thin film transistors fabricated by in situ growth of nanobeltson electrodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the device. The separation between the interdigital electrodes was about . The width of the interdigital electrodes was about . (b) The SEM image of the transistor. Scale bar: . A lot of nanobelts intercross with each other between the interdigital electrodes and form a conductive channel of the transistor. Inset: Magnified image of the nanobelts between the two interdigital electrodes. Scale bar: .

Image of FIG. 2.
FIG. 2.

(a) Typical characteristics in air at . The linear behavior indicated Ohmic contacts between the nanobelts and the electrodes. (b) The response of the current to UV illumination at and .

Image of FIG. 3.
FIG. 3.

The transfer characteristics at effectively depleted the carriers in the channel. increased linearly as was raised from 22 to , which was fitted by a dashed line.

Image of FIG. 4.
FIG. 4.

The output characteristics as gate voltages varying from to in steps of .

Image of FIG. 5.
FIG. 5.

The output characteristics at different air pressures at (curve , curve , and curve ).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thin film transistors fabricated by in situ growth of SnO2 nanobeltson Au∕Pt electrodes