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Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon
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10.1063/1.1790031
/content/aip/journal/apl/85/10/10.1063/1.1790031
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790031
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of the sample surface showing blisters of different sizes and an exfoliated area. This image is taken on the mechanically prethinned sample before FIB milling, and the topmost bright layer of the image is the cut edge. Blisters labeled A and B have been thinned to be observed by TEM cross sections.

Image of FIG. 2.
FIG. 2.

EFTEM images taken on the plan view of the sample. (a) A large blister. Bragg contours and dislocation loops are visible superimposed to the buried cavity. Interblister small cavities are visible (with arrows). (b) Structure of a small blister imaged in kinematical conditions: in this case the planetarylike structure is visible.

Image of FIG. 3.
FIG. 3.

Cross-section image of the blisters labeled A and B in Fig. 1. From top to bottom are visible: the Pt layer (the dark-gray contrast band), the thin silicon damaged layer, the silicon lamella with dark contrast details corresponding to crystallographic defects and the empty space corresponding to the single cavity for larger blister A, and to cavities of the planetarylike structure for smaller blister B. In between is the defective layer formed by dislocations and small cavities usually detected in TEM images of conventionally prepared cross sections.

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/content/aip/journal/apl/85/10/10.1063/1.1790031
2004-09-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790031
10.1063/1.1790031
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