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Pentacene field-effect transistors with sub- channel lengths
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10.1063/1.1790033
/content/aip/journal/apl/85/10/10.1063/1.1790033
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790033
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The function of the two side guards is to collect spreading currents. (b) The structure of a bottom-contact device. (c) SEM image just before pentacene evaporation of a channel. The white scale bar is . (d) SEM image after measurement of another channel. The white scale bar is .

Image of FIG. 2.
FIG. 2.

(Color online) (a) dc measurement of the device in Fig. 1(d), with the side guards biased at the same potential as the drain. (b) dc measurement of a channel device with the side guards biased. (c) vs plot of the data in (a). (d) vs plot of the data in (b).

Image of FIG. 3.
FIG. 3.

(a) Calculation of mobility from Fig. 2(a) using the transconductance in the linear region , measured from Fig. 1(d). (b) Statistics on the mobility of the measured devices ().

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/content/aip/journal/apl/85/10/10.1063/1.1790033
2004-09-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pentacene field-effect transistors with sub-10-nm channel lengths
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790033
10.1063/1.1790033
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