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High-electron-mobility heterostructures grown on -diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
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10.1063/1.1790073
/content/aip/journal/apl/85/10/10.1063/1.1790073
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790073
/content/aip/journal/apl/85/10/10.1063/1.1790073
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/content/aip/journal/apl/85/10/10.1063/1.1790073
2004-09-13
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/10/10.1063/1.1790073
10.1063/1.1790073
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