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(a) Resistivity vs temperature curves for films of different carbon doping. (b) Residual resistivity (closed circles) and (open circles) as a function of carbon concentration for films plotted in (a). In (a), from bottom to top, the nominal carbon concentrations of the curves are 0, 7.4, 15, 22, 29, 34, 39, 42, and .
TEM results of a film with nominal carbon concentration. (a) Cross-sectional image taken along the direction of the substrate. (b) Selected area electron diffraction taken from the interface area. (c) Planar-view image showing nano-grains of carbon doped and an amorphous phase between the grains. The insert is the select area electron diffraction pattern taken along the film normal.
(a) X-ray diffraction scans for films with carbon doping. From top to bottom, the nominal carbon concentrations are 0, 7.4, 15, 22, 28, 39, 42, and . The spectra are shifted vertically for clarity. The peaks labeled with an asterisk are due to the SiC substrate peaks. (c) The -axis lattice constant (open triangles) and -axis lattice constant (closed squares) of the carbon doped films as a function of nominal carbon concentration.
Upper critical field as a function of temperature for an undoped film and two doped films with and nominal carbon concentrations, respectively. The closed symbols are for parallel field and the open symbols are for perpendicular field .
Critical current density as a function of magnetic field and temperature for (a) an undoped film and (b) a film doped with with nominal carbon concentration.
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