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Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip
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10.1063/1.1787153
/content/aip/journal/apl/85/11/10.1063/1.1787153
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/11/10.1063/1.1787153
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Position of the absorbing layer, A, in the device structure together with the calculated electric field at .

Image of FIG. 2.
FIG. 2.

Emission spectra of RCLEDs with GaAs detection layer (solid line) and without detection layer (dotted line) over a broad spectral range.

Image of FIG. 3.
FIG. 3.

PV absorption spectra of the -RCLED.

Image of FIG. 4.
FIG. 4.

Photogenerated current by -detectors as a function of impinging power at .

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/content/aip/journal/apl/85/11/10.1063/1.1787153
2004-09-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/11/10.1063/1.1787153
10.1063/1.1787153
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