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Magnetoresistance of a -type AlGaAs heterostructure. The minima related to fractional quantum Hall states are marked by vertical arrows. Inset: Blow-up of the low-field regime. A clear minimum of the magnetoresistance around as well as a beating pattern in the SdH oscillations is observed.
Mobility vs carrier density tuned with a top gate voltage for two different temperatures.
Ratio of the carrier densities of the two subbands versus total density for a temperature of .
Experimental magnetoresistance (full line) for low-field magnetic fields and parabolic fit (dashed line).
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