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Palladium Schottky barrier contacts to hydrothermally grown and shallow electron states
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10.1063/1.1790592
/content/aip/journal/apl/85/12/10.1063/1.1790592
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1790592

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage measurements for Pd Schottky diodes from at room temperature (solid line, left axis). The triangles indicate the ideality factor as a function of the bias voltage (right axis). The data in the figure correspond to a contact size of .

Image of FIG. 2.
FIG. 2.

Capacitance-voltage measurements for Pd Schottky diodes from at room temperature (left and lower axis, solid line) with a measurement frequency of . The carrier concentration versus depletion width calculated from the CV data is also shown (right and upper axis, filled circles with solid line). The data in the figure correspond to a contact size of .

Image of FIG. 3.
FIG. 3.

Capacitance (a) and conductance (b) versus temperature obtained for Pd Schottky diodes on . The measurement frequencies were , , , , , and , respectively. The bias voltage was set to . (c) Arrhenius plot for the two peaks observed in (b). The data in the figure correspond to a contact size of .

Tables

Generic image for table
Table I.

Diode properties obtained at room temperature and an area of : reverse bias voltage , reverse current , forward resistance , built-in voltage , carrier concentration , effective barrier height from measurements, image force lowering , and the ideality factor .

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/content/aip/journal/apl/85/12/10.1063/1.1790592
2004-09-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Palladium Schottky barrier contacts to hydrothermally grown n-ZnOand shallow electron states
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1790592
10.1063/1.1790592
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