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Current-voltage measurements for Pd Schottky diodes from at room temperature (solid line, left axis). The triangles indicate the ideality factor as a function of the bias voltage (right axis). The data in the figure correspond to a contact size of .
Capacitance-voltage measurements for Pd Schottky diodes from at room temperature (left and lower axis, solid line) with a measurement frequency of . The carrier concentration versus depletion width calculated from the CV data is also shown (right and upper axis, filled circles with solid line). The data in the figure correspond to a contact size of .
Capacitance (a) and conductance (b) versus temperature obtained for Pd Schottky diodes on . The measurement frequencies were , , , , , and , respectively. The bias voltage was set to . (c) Arrhenius plot for the two peaks observed in (b). The data in the figure correspond to a contact size of .
Diode properties obtained at room temperature and an area of : reverse bias voltage , reverse current , forward resistance , built-in voltage , carrier concentration , effective barrier height from measurements, image force lowering , and the ideality factor .
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