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Schematics relating to the layer calculation. The vertical scales are exaggerated. (a) Growth of a dislocation loop on a particular glide plane, forming threading and misfit segments. (b) Approximation of a strained layer with a free surface by a capped layer having twice the thickness.
(a) The closed symbols show the percent strain relaxation observed in helium-implanted and annealed layers; circles refer to layers grown by ultrahigh vacuum chemical vapor deposition, triangles to layers grown by rapid thermal chemical vapor deposition. The open symbols show the behavior of layers that were not implanted. The marks show the theoretical predictions. (b) The data for implanted samples compared with the theoretical results when plotted in the form .
Plan view transmission electron microscopy image of final dislocation configuration of a sample layer relaxed via helium implantation and annealing. The round features are the coalesced-helium structures that have formed below the interface.
Representative sample of the dislocation configuration predicted by the simulation for the same thickness and applied strain. The scale is the same as that of Fig. 3.
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