1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical activation phenomena induced by excimer laser annealingin B-implanted silicon
Rent:
Rent this article for
USD
10.1063/1.1793352
/content/aip/journal/apl/85/12/10.1063/1.1793352
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1793352
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SRPs measured in samples irradiated with a single shot at different energy densities : solid line; dashed line; dotted line; (엯); dotted-dashed line. In the inset are shown the junction depth (∎), determined at a carrier concentration of , and the melt depth (●), calculated by heat-flow calculations.

Image of FIG. 2.
FIG. 2.

SRPs and SIMS profiles measured in samples irradiated with different number of pulses (1 and 10 pulses) at two different energy densities: 0.9 (a) and (b). The SRP and SIMS profiles in as-implanted samples are also shown in (a).

Image of FIG. 3.
FIG. 3.

Comparison between experimental carrier concentrations, deduced by SRP measurements (open symbols), and active B profiles, deduced by the numerical modeling of thermal activation (solid lines), for two energy densities 0.9 (a) and (b) and different number of pulses.

Loading

Article metrics loading...

/content/aip/journal/apl/85/12/10.1063/1.1793352
2004-09-24
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical activation phenomena induced by excimer laser annealingin B-implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1793352
10.1063/1.1793352
SEARCH_EXPAND_ITEM