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SRPs measured in samples irradiated with a single shot at different energy densities : solid line; dashed line; dotted line; (엯); dotted-dashed line. In the inset are shown the junction depth (∎), determined at a carrier concentration of , and the melt depth (●), calculated by heat-flow calculations.
SRPs and SIMS profiles measured in samples irradiated with different number of pulses (1 and 10 pulses) at two different energy densities: 0.9 (a) and (b). The SRP and SIMS profiles in as-implanted samples are also shown in (a).
Comparison between experimental carrier concentrations, deduced by SRP measurements (open symbols), and active B profiles, deduced by the numerical modeling of thermal activation (solid lines), for two energy densities 0.9 (a) and (b) and different number of pulses.
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