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Depletion-mode nanowire field-effect transistor
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10.1063/1.1794351
/content/aip/journal/apl/85/12/10.1063/1.1794351
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1794351
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of nanowire depletion-mode FET.

Image of FIG. 2.
FIG. 2.

Scanning electron micrograph of fabricated FET.

Image of FIG. 3.
FIG. 3.

(top) and transfer characteristics (bottom) of nanowire FET at room temperature in the dark.

Image of FIG. 4.
FIG. 4.

(top) and transfer characteristics (bottom) of nanowire FET at room temperature measured with illumination from UV light.

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/content/aip/journal/apl/85/12/10.1063/1.1794351
2004-09-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depletion-mode ZnO nanowire field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1794351
10.1063/1.1794351
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