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(a) Schematic diagram of a nanocrystalline silicon point-contact transistor with two side gates. (b) Scanning electron micrograph of a nanocrystalline silicon point-contact transistor.
(a) Grey-scale image of the source-drain conductance in a point-contact transistor at , as a function of the voltage on gate and gate . The source-drain voltage . (b) Three-dimensional graph of the same data. (c) Schematic showing two of the lines formed by the conductance peaks, which intersect and split in region “I.”
Drain-source conductance (circles) at , in the point-contact transistor as a function of and , for equal to (a) , (b) , (c) , and (d) . The traces are measured along the dashed lines in Fig. 2(c). The data can be fitted (solid line) using the sum of four Lorentzian peaks, , , , and (dashed lines).
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