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PL spectra of (a) undoped and (b) -doped epilayer measured at . For the -doped epilayer, the transition at disappears and a new emission line is observed at .
PL spectra of -doped AlN epilayer measured from 10 to .
The Arrhenius plot of the integrated PL emission intensity at between 10 and . The solid line is the least-squares fit of data with Eq. (2). The fitted value of the activation energy is also indicated.
Temporal response of the transition in -doped epilayer measured at . Observed recombination lifetime is .
Binding energy (in ) and decay lifetime (in ) of the fundamental transitions as well as energy levels (in ) of donor and acceptor impurities in AlN and .
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