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Acceptor-bound exciton transition in -doped AlN epilayer
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10.1063/1.1796521
/content/aip/journal/apl/85/12/10.1063/1.1796521
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1796521

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of (a) undoped and (b) -doped epilayer measured at . For the -doped epilayer, the transition at disappears and a new emission line is observed at .

Image of FIG. 2.
FIG. 2.

PL spectra of -doped AlN epilayer measured from 10 to .

Image of FIG. 3.
FIG. 3.

The Arrhenius plot of the integrated PL emission intensity at between 10 and . The solid line is the least-squares fit of data with Eq. (2). The fitted value of the activation energy is also indicated.

Image of FIG. 4.
FIG. 4.

Temporal response of the transition in -doped epilayer measured at . Observed recombination lifetime is .

Tables

Generic image for table
Table I.

Binding energy (in ) and decay lifetime (in ) of the fundamental transitions as well as energy levels (in ) of donor and acceptor impurities in AlN and .

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/content/aip/journal/apl/85/12/10.1063/1.1796521
2004-09-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Acceptor-bound exciton transition in Mg-doped AlN epilayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/12/10.1063/1.1796521
10.1063/1.1796521
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