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Tensely strained silicon on produced by strain transfer
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10.1063/1.1790593
/content/aip/journal/apl/85/13/10.1063/1.1790593
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1790593
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of modes from and epitaxial films of a heterostructure after growth and different strain relaxations. The bulk spectrum is shown for reference.

Image of FIG. 2.
FIG. 2.

Measured strain in the top layer vs reciprocal layer thickness for a series of heterostructures with different . The inclined and horizontal solid lines represent fits to experimental data corresponding to and , respectively. The dashed line corresponds to the critical thickness relation according to MB (Ref. 9).

Image of FIG. 3.
FIG. 3.

Sketch of different situations in the motion of TDs through a buffer and a top layer. (a), (b), and (c) illustrate complete , partial , and vanishing plastic strain transfer, respectively. Full thick, full thin, and open arrows indicate forces due to stress, line tension, and friction, respectively.

Image of FIG. 4.
FIG. 4.

The dark field XTEM showing (left) and bright-field XTEM of a (right) heterostructure. The MDs at the interface are marked with arrows. This case corresponds to Fig. 3(b).

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/content/aip/journal/apl/85/13/10.1063/1.1790593
2004-09-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensely strained silicon on SiGe produced by strain transfer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1790593
10.1063/1.1790593
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