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Observation of stacking faults in strained Si layers
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10.1063/1.1795354
/content/aip/journal/apl/85/13/10.1063/1.1795354
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795354
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical micrograph showing defects in a thin strained-Si layer grown on top of a step-graded SiGe buffer layer after chemical defect etching. About of Si remains above the buffer layer in this image. Dislocation pile-ups (PU), etch pits (EP), and stacking faults (SF) can be seen in the image.

Image of FIG. 2.
FIG. 2.

Tilt-view SEM images showing defect decoration of a SF in a strained-Si layer grown on a SGOI layer. Only about of the top Si layer has been etched from the surface. It is the undercut SiGe regions that are visible in the optical micrograph (cf., Fig. 1).

Image of FIG. 3.
FIG. 3.

PV-TEM image of a SGOI layer with no strained-Si layer growth. The image verifies the existence of SFs and suggests that the observed SF defects originate in the SiGe layer and are unrelated to the strained-Si layer growth.

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/content/aip/journal/apl/85/13/10.1063/1.1795354
2004-09-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of stacking faults in strained Si layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795354
10.1063/1.1795354
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