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Comment on “Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett.84, 538 (2004)]
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    Affiliations:
    1 Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Republic of China
    2 Department of Electrical Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China
    a) Author to whom correspondence should be addressed; electronic mail: rzr2390@yahoo.com.tw
    Appl. Phys. Lett. 85, 2661 (2004); http://dx.doi.org/10.1063/1.1795355
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2004-09-28
2014-04-24

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Scitation: Comment on “Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett.84, 538 (2004)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795355
10.1063/1.1795355
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