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Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett.85, 2661 (2004)]
2.Y.-J. Lin and C.-K. Tseng, Appl. Phys. Lett. 85, 2661 (2004), preceding paper.
6.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 270–279.
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