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Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett.85, 2661 (2004)]
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FIG. 1.

Change of SRPES core level spectra with in situ Ni deposition on (a) -type SiC and (b) -type SiC.

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FIG. 2.

Capacitance DLTS spectra of Schottky diode fabricated on -type 4H–SiC as a function of the bias conditions.

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2004-09-28
2014-04-21

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Scitation: Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett.85, 2661 (2004)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795356
10.1063/1.1795356
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