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In situ observation of electromigration-induced void migration in dual-damascene interconnect structures
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10.1063/1.1795978
/content/aip/journal/apl/85/13/10.1063/1.1795978
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795978
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of (a) upper and (b) lower layer test structure.

Image of FIG. 2.
FIG. 2.

(a) SEM of images of the cathode via region of test structure at various time intervals during in situ electromigration characterization (this particular structure was monitored for until failure occurred). (b) Resistance trace of the structure shown in (a).

Image of FIG. 3.
FIG. 3.

(a) SEM of images of the cathode via region of test structure at various time intervals during in situ electromigration characterization (this particular structure was monitored for until failure occurred). (b) Resistance trace of the structure shown in (a).

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/content/aip/journal/apl/85/13/10.1063/1.1795978
2004-09-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1795978
10.1063/1.1795978
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