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High-resolution transmission electron microscopic analysis of porous silicon∕silicon interface
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10.1063/1.1797558
/content/aip/journal/apl/85/13/10.1063/1.1797558
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1797558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRTEM images of the interface for two different anodization current densities: [(a) and (b)] and [(c) and (d)].

Image of FIG. 2.
FIG. 2.

(a) Selected area electron diffraction pattern along the [110] zone axis and processed images with the (111) reflections of interface, formed under anodization current densities of (b) and (c) .

Image of FIG. 3.
FIG. 3.

High resolution image of interface, in which significant lattice distortion is observed. The direction of the electrochemical attack is indicated.

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/content/aip/journal/apl/85/13/10.1063/1.1797558
2004-09-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-resolution transmission electron microscopic analysis of porous silicon∕silicon interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1797558
10.1063/1.1797558
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