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Scanning near–field photoluminescence mapping of (110) self-assembled quantum dots
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10.1063/1.1800272
/content/aip/journal/apl/85/13/10.1063/1.1800272
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1800272
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Far field PL spectrum of (110) quantum dots and WL. (b) PL line spectra of single quantum dots showing the appearance of biexcitons and excitonic excited states with increasing excitation power; is .

Image of FIG. 2.
FIG. 2.

(a) PL intensity maps measured at indicated energies and detection bandwidth . The scanned area is ; (b) PL spectra measured at specific locations indicated in (a).

Image of FIG. 3.
FIG. 3.

PL spectral line scan showing individual quantum dots and the spatially varying spectral width of the WL luminescence.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the PL spectrum measured in illumination mode which shows quenching of the WL and excited quantum dot luminescence intensity at high temperature.

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/content/aip/journal/apl/85/13/10.1063/1.1800272
2004-09-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning near–field photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/13/10.1063/1.1800272
10.1063/1.1800272
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