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Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering
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10.1063/1.1792384
/content/aip/journal/apl/85/14/10.1063/1.1792384
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1792384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of on the photon energy for , as a function of substrate temperature , for a fixed photons number. , , and are the photocurrent , the electronic charge and photon number , respectively. The photon number is equal to the product of the photon flux with the area of film irradiated by the monochromatic light.

Image of FIG. 2.
FIG. 2.

Dependence of the defect density (obtained from ESR) and the corresponding nitrogen concentration (determined from EELS) for films, as a function of substrate temperature .

Image of FIG. 3.
FIG. 3.

Dependence of the fraction and density of valence electrons for films, as a function of substrate temperature , obtained by electron-energy-loss spectroscopy.

Image of FIG. 4.
FIG. 4.

Dependence of the optical energy gap and Urbach energy , obtained from photothermal deflection spectroscopy, for films as a function of substrate temperature .

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/content/aip/journal/apl/85/14/10.1063/1.1792384
2004-10-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1792384
10.1063/1.1792384
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