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Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on films
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10.1063/1.1799248
/content/aip/journal/apl/85/14/10.1063/1.1799248
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1799248
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) NSOM topography image of V-shape pit and measurement spots. (b) Near-field PL spectra taken from each spot. The inset shows that near-band-edge emission intensity changes very little but the V-pit related broad peak increased rapidly toward the pit center.

Image of FIG. 2.
FIG. 2.

The upper line show the AFM profile of V pit about width and depth. The lower line shows surface potential distribution.

Image of FIG. 3.
FIG. 3.

Power dependence micro-PL results of peak position and intensity at .

Image of FIG. 4.
FIG. 4.

Closed-square line shows the difference of the surface potential between the flat region and center of pit, indicating that the Fermi level is lower in the larger pit case. Simultaneously, the open-circle line also increased with identical trend.

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/content/aip/journal/apl/85/14/10.1063/1.1799248
2004-10-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN∕GaN films
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1799248
10.1063/1.1799248
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