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Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy
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10.1063/1.1800277
/content/aip/journal/apl/85/14/10.1063/1.1800277
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1800277

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the SE experimental (open circles) and modeled (solid and dashed curves) data of sample SOI8 in graphs (a) and (b). Graphs (c) and (d) display the discrepancies between the modeled and experimental data.

Image of FIG. 2.
FIG. 2.

The BOX thickness obtained from SE data fittings for each of the SOI8 series of samples with two different SE models.

Image of FIG. 3.
FIG. 3.

The Raman spectra of specimen SOI8 and a wafer. The spectral intensity of the zone center one-phonon peak in each spectrum was normalized to unity. The inset shows the spectra on an expanded scale.

Tables

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Table I.

Summary of the SE results. The thicknesses of the BOX, SOI, and top layers were obtained from model which has a better figure of merit than for model .

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/content/aip/journal/apl/85/14/10.1063/1.1800277
2004-10-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1800277
10.1063/1.1800277
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