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High-temperature annealing and optical activation of Eu-implanted
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10.1063/1.1801686
/content/aip/journal/apl/85/14/10.1063/1.1801686
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1801686
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RBS∕C random and aligned spectra after implantation with into uncapped and capped with a layer.

Image of FIG. 2.
FIG. 2.

RBS∕C aligned spectra for capped with a layer and implanted with directly after implantation and after annealing at 1100 and .

Image of FIG. 3.
FIG. 3.

Room temperature CL spectra of -capped implanted with , taken with a beam voltage of and a current of , after annealing at 1100, 1200, and .

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/content/aip/journal/apl/85/14/10.1063/1.1801686
2004-10-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-temperature annealing and optical activation of Eu-implanted GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1801686
10.1063/1.1801686
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