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Photogenerated hole carrier injection to in an oxide heterostructure
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10.1063/1.1803616
/content/aip/journal/apl/85/14/10.1063/1.1803616
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1803616
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Current–voltage characteristics of a heterostructure measured at room temperature in the dark and under UV light irradiation with a light power of ; (b) UV light irradiance dependence of the open-circuit voltage (left) and the short-circuit current density (right).

Image of FIG. 2.
FIG. 2.

Spectral response of .

Image of FIG. 3.
FIG. 3.

Possible energy-level diagrams for the heterostructure in the dark (left) and under UV light irradiation (right).

Image of FIG. 4.
FIG. 4.

(a) Bias voltage dependence of in the dark, measure at an ac frequency of ; (b) injected surface charge density as a function of UV light irradiance.

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/content/aip/journal/apl/85/14/10.1063/1.1803616
2004-10-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photogenerated hole carrier injection to YBa2Cu3O7−x in an oxide heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/14/10.1063/1.1803616
10.1063/1.1803616
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