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plots as a function of external magnetic fields for (a) 0.30-μm-thick and (b) 0.15-μm-thick layers at 4.2 K. and 90° correspond to the fields parallel and perpendicular to the film surface, respectively. Open and solid circles represent values at and 90°, respectively. values exceeding in low fields could not be measured because of a thermal problem due to heat formation at the current contacts.
plots as a function of (angle of the fields against the film surface) for (a) 0.30-μm-thick and (b) 0.15-μm-thick layers at 4.2 K and 90° correspond to the fields parallel and perpendicular to the film surface, respectively. Open and solid squares and open and solid triangles represent values in 7, 5, 3, and 2 T, respectively.
TEM micrographs of the cross section of the film. (BFI and DFI, images) and a corresponding diffraction pattern are shown. The incident beam direction is  of the sapphire substrate.
Explanation for the relation between grain boundary pinning and profiles. profiles for (a) 0.30-μm-thick and (b) 0.15-μm-thick layers are the same as shown in Fig. 2. The difference of the peak position between the two films can be attributed to the different geometric arrangement of the columnar growth direction and the rotation axis in the measurement.
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