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(Color online) Boron concentration in obtained by SIMS measurements as a function of the B:Si ratio in the inlet gas.
HRTEM images of (a) TMB-doped with  growth orientation. A thin oxide layer was observed on the outer surface. (b) -doped consisting of a crystalline core surrounded by an amorphous shell.
FESEM image of the back-gated test structure used for four-point resistance and gate-dependent conductance measurements. A 3D schematic of the back-gated test structure is shown as an inset at the top left along with a high magnification image of the at the top right.
(a) Two-point of nominally undoped, -doped (left current axis), and TMB-doped (right current axis). Gate-dependent of the same (b) nominally undoped and (c) TMB-doped . The topmost curve in (b) and (c) plots are measured under . The gate voltage step for the nominally undoped is and that of the TMB-doped is .
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