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Structural and electrical properties of trimethylboron-doped silicon nanowires
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10.1063/1.1792800
/content/aip/journal/apl/85/15/10.1063/1.1792800
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1792800
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Boron concentration in obtained by SIMS measurements as a function of the B:Si ratio in the inlet gas.

Image of FIG. 2.
FIG. 2.

HRTEM images of (a) TMB-doped with [111] growth orientation. A thin oxide layer was observed on the outer surface. (b) -doped consisting of a crystalline core surrounded by an amorphous shell.

Image of FIG. 3.
FIG. 3.

FESEM image of the back-gated test structure used for four-point resistance and gate-dependent conductance measurements. A 3D schematic of the back-gated test structure is shown as an inset at the top left along with a high magnification image of the at the top right.

Image of FIG. 4.
FIG. 4.

(a) Two-point of nominally undoped, -doped (left current axis), and TMB-doped (right current axis). Gate-dependent of the same (b) nominally undoped and (c) TMB-doped . The topmost curve in (b) and (c) plots are measured under . The gate voltage step for the nominally undoped is and that of the TMB-doped is .

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/content/aip/journal/apl/85/15/10.1063/1.1792800
2004-10-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical properties of trimethylboron-doped silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1792800
10.1063/1.1792800
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