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Vertical composition gradient in alloy quantum dots as revealed by high-resolution x-ray diffraction
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10.1063/1.1803938
/content/aip/journal/apl/85/15/10.1063/1.1803938
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1803938
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured x-ray intensity distribution in the vicinity of the asymmetrical 224 reciprocal lattice point (d) compared to simulations of the scattered intensity calculated using different QD shapes and composition profiles (a–c) as described in Fig. 3. Feature (A) is caused by a detector artefact.

Image of FIG. 2.
FIG. 2.

Maps of the total strain tensor components (a) and (b) for a QD as shown in Fig. 3(b), calculated using the finite element method. Relative strain values as denoted in the scale refer to the GaAs lattice parameters.

Image of FIG. 3.
FIG. 3.

Model QD shapes and compositions used for scattering simulations. The wetting layer contains 37% In in all three structures. (a) Lens-shaped QD with homogeneous QD apex, containing 60% In. (b) Lens-like QD with a GaAs thick transition layer containing 45% In. (c) Inverted-cone-shaped QD with a GaAs transition layer containing 45% In. Dot dimensions are given in units of the GaAs lattice parameter .

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/content/aip/journal/apl/85/15/10.1063/1.1803938
2004-10-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical composition gradient in InGaAs∕GaAs alloy quantum dots as revealed by high-resolution x-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1803938
10.1063/1.1803938
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