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(Color online) Process flow for the cofabrication of -MOS and YBCO devices.
(Color online) Optical microscope photograph of a device containing -MOS (bottom) and YBCO (top) devices on the same silicon substrate. Inset shows an optical photograph of a 30-μm-wide 10-μm-long transistor with a Pt-based metallization after annealing.
(Color online) characteristics at of a 30-μm-wide 10-μm-long transistor with the Pt-based metallization as deposited (curve A) and after the YBCO deposition sequence at 300 K (curve B), and at 77 K (curve C). Inset shows the characteristics after YBCO deposition at 77 K.
(Color online) Normalized resistance (with respect to the value at 300 K) versus temperature characteristics of 80-nm-thick YBCO films deposited on buffered standard Si or Si containing the -MOS devices. Inset shows the characteristics in the 0–300 K range.
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