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Cofabrication of superconducting and semiconducting devices on (100) Si substrates
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10.1063/1.1805198
/content/aip/journal/apl/85/15/10.1063/1.1805198
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1805198
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Process flow for the cofabrication of -MOS and YBCO devices.

Image of FIG. 2.
FIG. 2.

(Color online) Optical microscope photograph of a device containing -MOS (bottom) and YBCO (top) devices on the same silicon substrate. Inset shows an optical photograph of a 30-μm-wide 10-μm-long transistor with a Pt-based metallization after annealing.

Image of FIG. 3.
FIG. 3.

(Color online) characteristics at of a 30-μm-wide 10-μm-long transistor with the Pt-based metallization as deposited (curve A) and after the YBCO deposition sequence at 300 K (curve B), and at 77 K (curve C). Inset shows the characteristics after YBCO deposition at 77 K.

Image of FIG. 4.
FIG. 4.

(Color online) Normalized resistance (with respect to the value at 300 K) versus temperature characteristics of 80-nm-thick YBCO films deposited on buffered standard Si or Si containing the -MOS devices. Inset shows the characteristics in the 0–300 K range.

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/content/aip/journal/apl/85/15/10.1063/1.1805198
2004-10-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cofabrication of superconducting YBa2Cu3O7−δ and semiconducting devices on (100) Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1805198
10.1063/1.1805198
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