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Schematic diagrams of UNIBOND® wafer samples with SHG signals from (a) Si-island and (b) buried oxide regions. The wavelength of the fundamental beam is and the power of the beam was .
Examples of SHG signals from Si-island and thick oxide regions (a) with the native oxide on top of Si film, and (b) those from the same regions after the native oxide was etched off with buffered HF. No bias was applied across the oxide.
Examples of SHG signals from a structure with applied bias across the oxide. The inset shows SHG signals with respect to the applied substrate bias. The voltage at which the SH intensity minima occurs is related to the residual field at the interface during wafer fabrication. The beam wavelength and power are the same as those used for the data inFig. 2.
Linear (left) and logarithmic (right) scales of the dc characteristics obtained from -MOSFETs with two different BOX thicknesses. The inset describes the application of the pseudo-MOS technique to aUNIBOND wafer.
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