1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Characterization of multiple interfaces in silicon-on-insulator materials via second-harmonic generation
Rent:
Rent this article for
USD
10.1063/1.1807011
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235
    2 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    3 Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235
    4 Department of Electrical Engineering and Computer Science and Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    5 SOITEC S.A., Chemin des Franques, Bernin, 38926 Crolles, France
    6 SOITEC S.A., Chemin des Franques, Bernin, 38926 Crolles, France and Institute of Microelectronics, Electromagnetism and Photonics (UMR CNRS, UJF and INPG), ENSERG, 38016 Grenoble Cedex 1, France
    7 Institute of Microelectronics, Electromagnetism and Photonics (UMR CNRS, UJF, and INPG), ENSERG, 38016 Grenoble Cedex 1, France
    8 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    a) Electronic mail: bongim.jun@vanderbilt.edu
    Appl. Phys. Lett. 85, 3095 (2004); http://dx.doi.org/10.1063/1.1807011
/content/aip/journal/apl/85/15/10.1063/1.1807011
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1807011
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of UNIBOND® wafer samples with SHG signals from (a) Si-island and (b) buried oxide regions. The wavelength of the fundamental beam is and the power of the beam was .

Image of FIG. 2.
FIG. 2.

Examples of SHG signals from Si-island and thick oxide regions (a) with the native oxide on top of Si film, and (b) those from the same regions after the native oxide was etched off with buffered HF. No bias was applied across the oxide.

Image of FIG. 3.
FIG. 3.

Examples of SHG signals from a structure with applied bias across the oxide. The inset shows SHG signals with respect to the applied substrate bias. The voltage at which the SH intensity minima occurs is related to the residual field at the interface during wafer fabrication. The beam wavelength and power are the same as those used for the data inFig. 2.

Image of FIG. 4.
FIG. 4.

Linear (left) and logarithmic (right) scales of the dc characteristics obtained from -MOSFETs with two different BOX thicknesses. The inset describes the application of the pseudo-MOS technique to aUNIBOND wafer.

Loading

Article metrics loading...

/content/aip/journal/apl/85/15/10.1063/1.1807011
2004-10-19
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1807011
10.1063/1.1807011
SEARCH_EXPAND_ITEM