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Characterization of multiple interfaces in silicon-on-insulator materials via second-harmonic generation
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10.1063/1.1807011
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    Affiliations:
    1 Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235
    2 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    3 Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville,Tennessee 37235
    4 Department of Electrical Engineering and Computer Science and Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    5 SOITEC S.A., Chemin des Franques, Bernin, 38926 Crolles, France
    6 SOITEC S.A., Chemin des Franques, Bernin, 38926 Crolles, France and Institute of Microelectronics, Electromagnetism and Photonics (UMR CNRS, UJF and INPG), ENSERG, 38016 Grenoble Cedex 1, France
    7 Institute of Microelectronics, Electromagnetism and Photonics (UMR CNRS, UJF, and INPG), ENSERG, 38016 Grenoble Cedex 1, France
    8 Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    a) Electronic mail: bongim.jun@vanderbilt.edu
    Appl. Phys. Lett. 85, 3095 (2004); http://dx.doi.org/10.1063/1.1807011
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/content/aip/journal/apl/85/15/10.1063/1.1807011
2004-10-19
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/15/10.1063/1.1807011
10.1063/1.1807011
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