1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals
Rent:
Rent this article for
USD
10.1063/1.1787599
/content/aip/journal/apl/85/16/10.1063/1.1787599
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1787599
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Anneal temperature dependence of the PL spectrum from SRSN film after isochronal anneals of . The inset shows the high-resolution TEM image of a nanocrystal Si formed after an anneal at , showing the 0.31 nm spaced fringes corresponding to (111) planes of crystalline Si.

Image of FIG. 2.
FIG. 2.

PL spectra of SRSN films with showing the effect of hydrogenation. The open symbols indicate as-annealed films, and the closed symbols indicate the hydrogenated films.

Image of FIG. 3.
FIG. 3.

Comparison of PL spectra of SRSN and SRSO films. The open symbols indicate SRSN films, and the closed symbols indicate the SRSO films. The inset shows the dependence of the normalized PL intensity and the PL peak position upon the excess Si content.

Image of FIG. 4.
FIG. 4.

PL spectrum of a SRSN film composed of multiple, thin layers with excess Si. The inset shows the schematic structure of this film.

Loading

Article metrics loading...

/content/aip/journal/apl/85/16/10.1063/1.1787599
2004-10-22
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1787599
10.1063/1.1787599
SEARCH_EXPAND_ITEM