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(a) Schematic of the device structure. (b) Etch calibration of our structure. The data were measured by AFM operating in tapping mode. Circles indicate the rms surface roughness of some of the samples.
PL intensities (dots) and the corresponding lifetimes (squares) of an ensemble of QDs are plotted as a function of the distance from the wetting layer to the surface at 5 K. The inset shows the raw data of the lifetime measurement for samples with one and eight bilayers removed. The intensity (lifetime) measurement was taken under wetting-layer (GaAs) excitation.
(a) PL of a single QD with (i) two bilayers, (ii) five bilayers, and (iii) seven bilayers removed. (b) Traces of the linewidths for (i) 934.6 nm, (ii) the 938.1 nm, and (iii) the 943 nm emission peaks, and (iv) shows the corresponding peak wavelengths. The QD was excited by a cw diode laser (780 nm).
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